Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
Mitani, Yoichiro, Tomita, Nobuyuki, Hamano, Kenichi, Tarutani, Masayoshi, Tanaka, Takanori, Ohno, Akihito, Kuroiwa, Takeharu, Toyoda, Yoshihiko, Imaizumi, Masayuki, Sumitani, Hiroaki, Yamakawa, SatoshТом:
778-780
Мова:
english
Журнал:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.167
Date:
February, 2014
Файл:
PDF, 1.49 MB
english, 2014