High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes
Bhatnagar, Praneet, Wright, Nicolas G., Horsfall, A.B., Johnson, C. Mark, Uren, Michael J., Hilton, Keith P., Munday, A.G., Hydes, A.J.Том:
556-557
Рік:
2007
Мова:
english
Журнал:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.556-557.987
Файл:
PDF, 314 KB
english, 2007