Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction
Nakabayashi, Masashi, Fujimoto, Tatsuo, Tsuge, Hiroshi, Kojima, Kiyoshi, Abe, Kozo, Shimomura, KohtaТом:
778-780
Мова:
english
Журнал:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.778-780.453
Date:
February, 2014
Файл:
PDF, 304 KB
english, 2014