Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer
Chen, Jun, Fan, Guang-Han, Zheng, Shu-WenТом:
28
Мова:
english
Журнал:
Chinese Physics Letters
DOI:
10.1088/0256-307X/28/12/128501
Date:
December, 2011
Файл:
PDF, 286 KB
english, 2011