Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor
Zhao, Sheng-Lei, Chen, Wei-Wei, Yue, Tong, Wang, Yi, Luo, Jun, Mao, Wei, Ma, Xiao-Hua, Hao, YueТом:
22
Мова:
english
Журнал:
Chinese Physics B
DOI:
10.1088/1674-1056/22/11/117307
Date:
November, 2013
Файл:
PDF, 1.41 MB
english, 2013