AlGaN/GaN Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation
Han, Sang-Woo, Park, Sung-Hoon, Lee, Jae-Gil, Lim, Jongtae, Cha, Ho-YoungТом:
36
Мова:
english
Журнал:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2427202
Date:
June, 2015
Файл:
PDF, 669 KB
english, 2015