Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process and crystal structure of GaN heteroepitaxial layers grown on Si(0 0 1) and Si(1 1 1) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance
Tokuo Yodo, Hironori Ando, Daiki Nosei, Jyunya Seko, Kentarou Sakai, Masakazu Shimeno, Yoshiyuki HaradaТом:
233
Рік:
2001
Мова:
english
Сторінки:
12
DOI:
10.1016/s0022-0248(01)01566-4
Файл:
PDF, 296 KB
english, 2001