Electronic structures of p-type GaN codoped with Be or Mg as the acceptors and Si or O as the donor codopants
Yamamoto, Tetsuya, Katayama-Yoshida, HiroshiТом:
189-190
Мова:
english
Сторінки:
5
Журнал:
Journal of Crystal Growth
DOI:
10.1016/s0022-0248(98)00346-7
Date:
June, 1998
Файл:
PDF, 136 KB
english, 1998