[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition
Jagannathan, Hemanth, Edge, Lisa F., Jamison, Paul, Iijima, Ryosuke, Narayanan, Vijay, Paruchuri, Vamsi K., Clark, Robert, Consiglio, Steven, Wajda, Cory, Leusink, GertРік:
2009
Мова:
english
DOI:
10.1149/1.3118951
Файл:
PDF, 1.80 MB
english, 2009
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