Filament-Type Resistive Switching in Homogeneous Bi-Layer Pr[sub 0.7]Ca[sub 0.3]MnO[sub 3] Thin Film Memory Devices
Liu, Xinjun, Biju, Kuyyadi P., Bourim, El Mostafa, Park, Sangsu, Lee, Wootae, Lee, Daeseok, Seo, Kyungah, Hwang, HyunsangТом:
14
Рік:
2011
Мова:
english
Журнал:
Electrochemical and Solid-State Letters
DOI:
10.1149/1.3505098
Файл:
PDF, 648 KB
english, 2011