Source-End Layout Influences on MOSFET ESD Protection Devices in a 0.35um 5V Process
Chen, Shen Li, Lee, Min Hua, Wu, Tzung ShianТом:
694-697
Мова:
english
Журнал:
Advanced Materials Research
DOI:
10.4028/www.scientific.net/AMR.694-697.1454
Date:
May, 2013
Файл:
PDF, 785 KB
english, 2013