Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
Ishikawa, Yukari, Sugawara, Yoshihiro, Saitoh, Hiroaki, Danno, Katsunori, Kawai, Yoichiro, Shibata, Noriyoshi, Hirayama, Tsukasa, Ikuhara, YuichiТом:
645-648
Мова:
english
Журнал:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.645-648.351
Date:
April, 2010
Файл:
PDF, 2.58 MB
english, 2010
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