Low-resistivity m -plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method
Kojima, Kazunobu, Tsukada, Yusuke, Furukawa, Erika, Saito, Makoto, Mikawa, Yutaka, Kubo, Shuichi, Ikeda, Hirotaka, Fujito, Kenji, Uedono, Akira, Chichibu, Shigefusa F.Том:
8
Мова:
english
Журнал:
Applied Physics Express
DOI:
10.7567/APEX.8.095501
Date:
September, 2015
Файл:
PDF, 529 KB
english, 2015
File converter
Більше результатів пошуку
More benefits 
