Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes
Shi, Yi, Saito, Kenichi, Ishikuro, Hiroki, Hiramoto, ToshiroТом:
38
Мова:
english
Журнал:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.38.425
Date:
January, 1999
Файл:
PDF, 292 KB
english, 1999