Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2002 Vol. 477; Iss. 1-3
Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes
G. Verzellesi, G.-F. Dalla Betta, M. Boscardin, G.U. Pignatel, L. BosisioТом:
477
Рік:
2002
Мова:
english
Сторінки:
6
DOI:
10.1016/s0168-9002(01)01885-x
Файл:
PDF, 203 KB
english, 2002