Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source
Shu-Dong, Wu, Li-Wei, Guo, Wen-Xin, Wang, Zhi-Hua, Li, Ping-Juan, Niu, Qi, Huang, Jun-Ming, ZhouТом:
22
Мова:
english
Журнал:
Chinese Physics Letters
DOI:
10.1088/0256-307X/22/4/050
Date:
April, 2005
Файл:
PDF, 199 KB
english, 2005