Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65-nm NOR Flash Memory
Yang, Xiaonan, Zheng, Zhiwei, Wang, Yan, Huo, Zongliang, Jin, Lei, Jiang, Dandan, Wang, Zhongyong, Chiu, Shengfen, Wu, Hanming, Liu, MingТом:
36
Мова:
english
Журнал:
IEEE Electron Device Letters
DOI:
10.1109/LED.2014.2367104
Date:
January, 2015
Файл:
PDF, 1.40 MB
english, 2015