Study on capacitance–voltage characteristics of diamond field-effect transistors with NO 2 hole doping and Al 2 O 3 gate insulator layer
Kasu, Makoto, Hirama, Kazuyuki, Harada, Kazuya, Oishi, ToshiyukiТом:
55
Мова:
english
Журнал:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.041301
Date:
April, 2016
Файл:
PDF, 1.80 MB
english, 2016