Characteristics of SiO2/Si3N4/SiO2 Stacked-Gate Dielectrics Obtained via Atomic-Layer Deposition
Lee, Youn-Seoung, Lee, Yong-Hyuk, Ju, Hyun-Jin, Lee, Won-Jun, Lee, Hee Soo, Rha, Sa-KyunТом:
11
Мова:
english
Журнал:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2011.4326
Date:
July, 2011
Файл:
PDF, 3.18 MB
english, 2011