Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNXSchottky Metal Structures for High-Power Applications
Hsieh, Ting-En, Lin, Yueh-Chin, Chu, Chung-Ming, Chuang, Yu-Lin, Huang, Yu-Xiang, Shi, Wang-Cheng, Dee, Chang-Fu, Majlis, Burhanuddin Yeop, Lee, Wei-I, Chang, Edward YiТом:
45
Мова:
english
Журнал:
Journal of Electronic Materials
DOI:
10.1007/s11664-016-4534-1
Date:
July, 2016
Файл:
PDF, 2.65 MB
english, 2016
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