[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Layout-induced stress effects on the performance and variation of FinFETs
Lee, Choongmok, Kang, Hyun-Chul, Min, Jeong Guk, Kim, Jongchol, Kwon, Uihui, Lee, Keun-Ho, Park, YoungkwanРік:
2015
Мова:
english
DOI:
10.1109/sispad.2015.7292336
Файл:
PDF, 1013 KB
english, 2015
File converter
Більше результатів пошуку
More benefits 
