Nitridation of Si surface using ICP (inductively coupled plasma) system for MeFIS-FET applications
Koo, June-Mo, Min, Hyung-Seob, Kim, Taeho, Lee, Wonhee, Lee, Jae-Gab, Kim, Jiyoung, Han, JaeheonТом:
260
Мова:
english
Журнал:
Ferroelectrics
DOI:
10.1080/00150190108016029
Date:
January, 2001
Файл:
PDF, 443 KB
english, 2001