SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California (Sunday 12 February 2012)] Metrology, Inspection, and Process Control for Microlithography XXVI - Reticle intensity-based critical dimension uniformity to improve efficiency for DOMA correction in a foundry
Tang, Kin Wai, Ng, Teng Hwee, Huang, Lei, Ng, Susan, Ku, Thomas, Chia, Wee Teck, Chua, Lin, Li, William, Chin, Aaron, Dayal, Aditya, Vavul, Tom, Hutchinson, Trent, Starikov, AlexanderТом:
8324
Рік:
2012
Мова:
english
DOI:
10.1117/12.916335
Файл:
PDF, 747 KB
english, 2012
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