ChemInform Abstract: PECVD Oxide Step-Coverage Considerations for Use as an Interlayer Dielectric in CMOS DLM Processing.
BRADER, S. J. H., QUINLAN, S. C.Том:
19
Журнал:
ChemInform
DOI:
10.1002/chin.198851348
Date:
December, 1988
Файл:
PDF, 114 KB
1988