Bias Polarity-Induced Transformation of Point Contact Resistive Switching Memory from Single Transparent Conductive Metal Oxide Layer
Huang, Jian-Shiou, Lin, Yung-Chang, Tsai, Hung-Wei, Yen, Wen-Chun, Chen, Chia-Wei, Lee, Chi-Yuan, Chin, Tsung-Shune, Chueh, Yu-LunТом:
1
Мова:
english
Журнал:
Advanced Electronic Materials
DOI:
10.1002/aelm.201500061
Date:
August, 2015
Файл:
PDF, 2.54 MB
english, 2015
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