Effect of p-GaN hole concentration on the stabilization and performance of a graphene current spreading layer in near-ultraviolet light-emitting diodes
Min, Jung-Hong, Seo, Tae Hoon, Choi, Sang-Bae, Kim, Kiyoung, Lee, Jun-Yeob, Park, Mun-Do, Kim, Myung Jong, Suh, Eun-Kyung, Kim, Jong-Ryeol, Lee, Dong-SeonТом:
16
Мова:
english
Журнал:
Current Applied Physics
DOI:
10.1016/j.cap.2016.08.006
Date:
October, 2016
Файл:
PDF, 3.16 MB
english, 2016
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