Fabrication and electrical properties of an AlGaN/GaN HEMT on SiC with a taper-shaped backside via hole
Min, Byoung-Gue, Kim, Seong-Il, Lee, Jong-Min, Yoon, Hyung Sup, Kim, Haecheon, Ahn, Ho-Kyun, Cho, Kyu-Jun, Kang, Dong-Min, Lee, Sang-Heung, Ju, Chul-Won, Lim, Jong-Won, Jun, Byoung-Chul, Jung, Youn-KoТом:
67
Мова:
english
Журнал:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.67.718
Date:
August, 2015
Файл:
PDF, 1.66 MB
english, 2015
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