[IEEE 2015 IEEE 11th International Conference on ASIC (ASICON ) - Chengdu, China (2015.11.3-2015.11.6)] 2015 IEEE 11th International Conference on ASIC (ASICON) - Performance evaluation and influence of device parameters on threshold voltage of dual-material strained gate-all-around MOSFET
Zhang, Yefei, Li, Zunchao, Meng, Qingzhi, Guan, Yunhe, Luo, DongxuРік:
2015
Мова:
english
DOI:
10.1109/ASICON.2015.7517160
Файл:
PDF, 291 KB
english, 2015