Indium Preferential Distribution Enables Electronic Engineering of Magnetism in FeSb 2– x In x Se 4 p-Type High-Tc Ferromagnetic Semiconductors
Moroz, Nicholas A., Lopez, Juan S., Djieutedjeu, Honore, Ranmohotti, Kulugammana G. S., Olvera, Alan, Ren, Pan, Page, Alexander, Takas, Nathan J., Uher, Ctirad, Poudeu, Pierre F. P.Мова:
english
Журнал:
Chemistry of Materials
DOI:
10.1021/acs.chemmater.6b03293
Date:
November, 2016
Файл:
PDF, 4.56 MB
english, 2016