Resistance-switching mechanism of SiO 2 :Pt-based Mott memory
Zhang, Keke, Lu, Nianduan, Li, Ling, Liu, Qi, Liu, MingТом:
118
Мова:
english
Журнал:
Journal of Applied Physics
DOI:
10.1063/1.4938530
Date:
December, 2015
Файл:
PDF, 2.47 MB
english, 2015