Effects of GaSb surface preparation on the characteristics of HfO 2 /Al 2 O 3 /GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition
Hsueh, Wei-Jen, Chen, Cheng-Yu, Chang, Chao-Min, Chyi, Jen-Inn, Huang, Mao-LinТом:
35
Мова:
english
Журнал:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.4967233
Date:
January, 2017
Файл:
PDF, 2.13 MB
english, 2017
File converter
Більше результатів пошуку
More benefits 
