Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography
Goue, O.Y., Yang, Yu, Guo, J.Q., Raghothamachar, Balaji, Dudley, Michael, Hosteller, J.L., Myers-Ward, Rachael L., Klein, Paul B., Gaskill, D. KurtТом:
858
Мова:
english
Журнал:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.297
Date:
May, 2016
Файл:
PDF, 448 KB
english, 2016