[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates
Handa, Hiroyuki, Ujita, Shinji, Shibata, Daisuke, Kajitani, Ryo, Shiozaki, Nanako, Ogawa, Masahiro, Umeda, Hidekazu, Tanaka, Kenichiro, Tamura, Satoshi, Hatsuda, Tsuguyasu, Ishida, Masahiro, Ueda, TetРік:
2016
Мова:
english
DOI:
10.1109/IEDM.2016.7838387
Файл:
PDF, 402 KB
english, 2016
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