[IEEE 2016 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2016.12.3-2016.12.7)] 2016 IEEE International Electron Devices Meeting (IEDM) - Thermal resistance modeling of back-end interconnect and intrinsic FinFETs, and transient simulation of inverters with capacitive loading effects
Yan, Jhih-Yang, Jan, Sun-Rong, Peng, Yu-Jiun, Lin, H. H., Wan, W. K., Huang, Y.-H., Hung, Bigchoug, Chan, K.-T., Huang, Michael, Yang, M.-T., Liu, C. W.Рік:
2016
Мова:
english
DOI:
10.1109/IEDM.2016.7838550
Файл:
PDF, 707 KB
english, 2016
File converter
Більше результатів пошуку
More benefits 
