[IEEE 2016 46th European Microwave Conference (EuMC) - London, United Kingdom (2016.10.4-2016.10.6)] 2016 46th European Microwave Conference (EuMC) - Self-biasing effects induced by RF step-stress in Ka-band LNAs based on InAlN/GaN HEMT technology
Tartarin, J.G., Nsele, S.D., Piotrowicz, S., Delage, S.Рік:
2016
Мова:
english
DOI:
10.1109/EuMC.2016.7824617
Файл:
PDF, 366 KB
english, 2016