Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect
Nifa, Iliass, Leroux, Charles, Torres, Alphonse, Charles, Matthew, Blachier, Denis, Reimbold, Gilles, Ghibaudo, G., Bano, EdwigeМова:
english
Журнал:
Microelectronic Engineering
DOI:
10.1016/j.mee.2017.05.009
Date:
May, 2017
Файл:
PDF, 1.01 MB
english, 2017