High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN x MIS structure
Kang, Myoung-Jin, Lee, Min-Seong, Choi, Gwang-Ho, Hwang, Il-Hwan, Cha, Ho-Young, Seo, Kwang-SeokМова:
english
Журнал:
physica status solidi (a)
DOI:
10.1002/pssa.201600726
Date:
May, 2017
Файл:
PDF, 1.20 MB
english, 2017