Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD
Müting, Johanna, Kakarla, Bhagyalakshmi, Grossner, UlrikeТом:
897
Мова:
english
Журнал:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.897.553
Date:
May, 2017
Файл:
PDF, 466 KB
english, 2017