Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2014 / 11 Vol. 32; Iss. 6
Hydrogen silsesquioxane on SOI proximity and microloading effects correction from a single 1D characterization sample
Bickford, Justin R., Lopez, Gerald, Belic, Nikola, Hofmann, UlrichТом:
32
Мова:
english
Журнал:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.4901567
Date:
November, 2014
Файл:
PDF, 1.16 MB
english, 2014
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