[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Nanoscale Ge fin etching using inductively coupled plasma for Ge-based multi-gate devices
Bingxin Zhang,, Xia An,, Yuxuan Xia,, Ming Li,, Meng Lin,, Peilin Hao,, Xing Zhang,, Ru Huang,Рік:
2016
Мова:
english
DOI:
10.1109/ICSICT.2016.7998901
Файл:
PDF, 435 KB
english, 2016
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