A near-threshold 10T differential SRAM cell with high read and write margins for tri-gated FinFET technology
Limachia, Mitesh, Thakker, Rajesh, Kothari, NikhilМова:
english
Журнал:
Integration, the VLSI Journal
DOI:
10.1016/j.vlsi.2017.11.009
Date:
December, 2017
Файл:
PDF, 2.10 MB
english, 2017
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