A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
Kaczer, B., Franco, J., Weckx, P., Roussel, Ph.J., Putcha, V., Bury, E., Simicic, M., Chasin, A., Linten, D., Parvais, B., Catthoor, F., Rzepa, G., Waltl, M., Grasser, T.Том:
81
Мова:
english
Журнал:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.11.022
Date:
February, 2018
Файл:
PDF, 1.17 MB
english, 2018
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