Improved performance of In 0.83 Ga 0.17 As/InP photodetectors through modifying the position of In 0.66 Ga 0.34 As/InAs superlattice electron barrier
Shi, Yan-hui, Zhang, Yong-gang, Ma, Ying-jie, Gu, Yi, Chen, Xing-you, Gong, Qian, Du, Ben, Zhang, Jian, Zhu, YiТом:
89
Мова:
english
Журнал:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2017.12.014
Date:
March, 2018
Файл:
PDF, 678 KB
english, 2018
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