[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - N-polar GaN MIS-HEMTs on sapphire with a proposed figure of merit fmax·VDS, Q of 9.5THz.V
Zheng, Xun, Guidry, Matthew, Li, Haoran, Romanczyk, Brian, Ahmadi, Elaheh, Hestroffer, Karine, Wienecke, Steven, Keller, Stacia, Mishra, Umesh K.Рік:
2017
Мова:
english
DOI:
10.1109/drc.2017.7999408
Файл:
PDF, 437 KB
english, 2017
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