SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode
Li, Xuan, Tong, Xing, Huang, Alex Q., Tao, Hong, Zhou, Kun, Jiang, Yifan, Jiang, Junning, Deng, Xiaochuan, She, Xu, Zhang, Bo, Zhang, Yourun, Tian, QiТом:
65
Мова:
english
Журнал:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2767904
Date:
January, 2018
Файл:
PDF, 2.16 MB
english, 2018
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