[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing
Gao, Bin, Wu, Huaqiang, Wu, Wei, Wang, Xiaohu, Yao, Peng, Xi, Yue, Zhang, Wenqiang, Deng, Ning, Huang, Peng, Liu, Xiaoyan, Kang, Jinfeng, Chen, Hong-Yu, Yu, Shimeng, Qian, HeРік:
2017
DOI:
10.1109/IEDM.2017.8268326
Файл:
PDF, 906 KB
2017
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