Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing
Sun, Feng, Li, Chen, Fu, Chaochao, Zhou, Xiangbiao, Luo, Jun, Zou, Wei, Qiu, Zhi-Jun, Wu, DongpingТом:
11
Мова:
english
Журнал:
Materials
DOI:
10.3390/ma11040471
Date:
March, 2018
Файл:
PDF, 5.15 MB
english, 2018