Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO 2 covered spacing on Si (111) substrates
Han, Xiaobiao, Luo, Hui, Yang, Hang, Chen, Jie, Zhong, Changming, Liang, Jiezhi, Xing, Jieying, Wu, Zhisheng, Liu, Yang, Zhang, BaijunТом:
87
Мова:
english
Журнал:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2018.05.040
Date:
November, 2018
Файл:
PDF, 1.43 MB
english, 2018
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