Electrical characterisation of n-doped SiGeSn diodes with high Sn content.
Clausen, Caterina Johanna, Fischer, Inga Anita, Weißhaupt, David, Oehme, Michael, Bärwolf, Florian, Tillack, Bernd, Colston, Gerard, Myronov, Maksym, Schulze, JoergМова:
english
Журнал:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aae3ab
Date:
September, 2018
Файл:
PDF, 1.63 MB
english, 2018