Characterization of a novel 10T SRAM cell with improved data stability and delay performance for 20-nm tri-gated FinFET technology
Limachia, Mitesh Jethabhai, Thakker, Rajesh A., Kothari, Nikhil J.Том:
44
Мова:
english
Журнал:
Circuit World
DOI:
10.1108/CW-01-2018-0002
Date:
November, 2018
Файл:
PDF, 377 KB
english, 2018
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